Topics in Growth and Device Processing o

Topics in Growth and Device Processing o
2 089,- 2 089,-
Format E-Bok
Filformat PDF
Utgivelsesår 1996
Forlag World Scientific Publishing Co
Språk Engelsk
ISBN 9789812831675
Sider 560
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Om Topics in Growth and Device Processing o

This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.Contents: Compound Semiconductor Growth by Metalorganic Molecular Beam Epitaxy (MOMBE)Growth of Heterojunction Bipolar Transistors from Molecular BeamsHeteroepitaxyImplant Doping and IsolationRapid Thermal AnnealingWet and Dry Etching of III-V SemiconductorsHydrogen in Crystalline Semiconductors: III-V CompoundsHeterojunction Bipolar Transistors: Processing and DevicesNovel Heterostructure Field Effect TransistorsReadership: Engineers and condensed matter physicists.Key Features:eng works touching on the subject of China and ICTs are few and far between, thus this rare book will interest and benefit Western readers


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