Frontiers in Electronics

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Frontiers in Electronics is divided into four sections: advanced terahertz and photonics devices; silicon and germanium on insulator and advanced CMOS and MOSHFETs; nanomaterials and nanodevices; and wide band gap technology for high power and UV ph…

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    Om Frontiers in Electronics

    Frontiers in Electronics is divided into four sections: advanced terahertz and photonics devices; silicon and germanium on insulator and advanced CMOS and MOSHFETs; nanomaterials and nanodevices; and wide band gap technology for high power and UV photonics. This book will be useful for nano-microelectronics scientists, engineers, and visionary research leaders. It is also recommended to graduate students working at the frontiers of the nanoelectronics and microscience.Contents:Advanced Terahertz and Photonics Devices:Broadband Terahertz Wave Generation, Detection and Coherent Control Using Terahertz Gas Photonics (J Liu, J Dai, X Lu, I C Ho and X C Zhang)How Do We Lose Excitation in the Green? (C Wetzel, Y Xia, W Zhao, Y Li, M Zhu, S You, L Zhao, W Hou, C Stark and M Dibiccari)Silicon Finfets as Detectors of Terahertz and Sub-Terahertz Radiation (W Stillman, C Donais, S Rumyantsev, M Shur, D Veksler, C Hobbs, C Smith, G Bersuker, W Taylor and R Jammy)Progress in Development of Room Temperature CW GaSb Based Diode Lasers for 2-3.5 μm Spectral Region (T Hosoda, J Chen, G Tsvid, D Westerfeld, R Liang, G Kipshidze, L Shterengas and G Belenky)WDM Demultiplexing by Using Surface Plasmon Polaritons (D K Mynbaev and V Sukharenko)Silicon and Germanium on Insulator and Advanced CMOS and MOSHFETs:Connecting Electrical and Structural Dielectric Characteristics (G Bersuker, D Veksler, C D Young, H Park, W Taylor, P Kirsch, R Jammy, L Morassi, A Padovani and L Larcher)Advanced Solutions for Mobility Enhancement in SOI MOSFETs (L Pham-Nguyen, C Fenouillet-Beranger, P Perreau, S Denorme, G Ghibaudo, O Faynot, T Skotnicki, A Ohata, M Casse, I Ionica, W van den Daele, K-H Park, S-J Chang, Y-H Bae, M Bawedin and S Cristoloveanu)Electron Scattering in Buried InGaAs/High-K MOS Channels (S Oktyabrsky, P Nagaiah, V Tokranov, M Yakimov, R Kambhampati, S Koveshnikov, D Veksler, N Goel and G Bersuker)Low Frequency Noise and Interface Density of Traps in InGaAs MOSFETs with GdScO3 High-K Dielectric (S Rumyantsev, W Stillman, M Shur, T Heeg, D G Schlom, S Koveshnikov, R Kambhampati, V Tokranov and S Oktyabrsky)Low-Power Biomedical Signal Monitoring System for Implantable Sensor Applications (M R Haider, J Holleman, S Mostafa and S K Islam)Nanomaterials and Nanodevices:III-V Compound Semiconductor Nanowires for Optoelectronic Device Applications (Q Gao, H J Joyce, S Paiman, J H. Kang, H H Tan, Y Kim, L M Smith, H E Jackson, J M Yarrison-Rice, J Zou and C Jagadish)Electron Heating in Quantum-Dot Structures with Collective Potential Barriers (L H Chien, A Sergeev, N Vagidov, V Mitin and S Birner)Electronic Structure of Graphene Nanoribbons Subjected to Twist and Nonuniform Strain (A Dobrinsky, A Sadrzadeh, B I Yakobson and J Xu)Low-Frequency Electronic Noise in Graphene Transistors: Comparison with Carbon Nanotubes (G Liu, W Stillman, S Rumyantsev, M Shur and A A Balandin)ZnO Nanocrystalline High Performance Thin Film Transistors (B Bayraktaroglu, K Leedy and R Neidhard)Zinc Oxide Nanoparticles for Ultraviolet Photodetection (S Sawyer, L Qin and C Shing)Carbon- Based Nanoelectromechanical Devices (S Bengtsson, P Enoksson, F A Ghavanini, K Engström, P Lundgren, E E B Campbell, J Ek- Weis, N Olofsson and A Eriksson)Charge Puddles and Edge Effect in a Graphene Device as Studied by a Scanning Gate Microscope (J Chae, H J Yang, H Baek, J Ha, Y Kuk, S Y Jung, Y J Song, N B Zhitenev, J A Stroscio, S J Woo and Y-W Son)Wide Band Gap Technology for High Power and UV Photonics:Novel Approaches to Microwave Switching Devices Using Nitride Technology (G Simin, J Wang, B Khan, J Yang, A Sattu, R Gaska and M Shur)Readership: Graduate students, academics and professionals in the field of electrical and electronics engineering.

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    Detaljer

    Format
    E-Bok
    Filformat
    PDF
    Utgivelsesår
    2013
    Forlag
    World Scientific Publishing Co
    Språk
    Engelsk
    ISBN
    9789814383721
    Sider
    240

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