Measurement and Modeling of Silicon Hete

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When you see a nicely presented set of data, the natural response is: "How did they do that; what tricks did they use; and how can I do that for myself?" Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held…

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    Om Measurement and Modeling of Silicon Hete

    When you see a nicely presented set of data, the natural response is: "How did they do that; what tricks did they use; and how can I do that for myself?" Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to- reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.

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    Detaljer

    Format
    E-Bok
    Kopisperre
    Teknisk DRM
    Filformat
    PDF
    Utgivelsesår
    2018
    Forlag
    CRC Press
    Språk
    Engelsk
    ISBN
    9781420066937
    Sider
    200

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