Modeling and Characterization of RF and

Modeling and Characterization of RF and
Nettpris
Nettpris
575,- 575,-
Førpris 719,- Spar 144,-
Førpris 719,- Spar 144,-
E-Bok
Format E-Bok
Kopisperre Teknisk DRM
Filformat PDF
Utgivelsesår 2007
Forlag Cambridge University Press
Språk Engelsk
ISBN 9780511372414
Se flere detaljer  

Om Modeling and Characterization of RF and

This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market- leading high-power RF technology, LDMOS, as well as with III-V power devices.


Kundevurderinger

ARKs anbefalinger

Det finnes ingen vurderinger av dette produktet. Skriv anmeldelse

Anbefalt


Tips en venn