Effect of Disorder and Defects in Ion-Im

Effect of Disorder and Defects in Ion-Im

Pris
3 549,-
E-Bok
E-bøkene legges i din ARK-leseapp. Bøkene kan også lastes ned fra Din side.
×
Logg deg inn for å gjennomføre dette kjøpet med ett klikk!

Etter at kjøpet er gjennomført vil boken være tilgjengelig på «din side» og i ARK-appen
Skriv anmeldelse
Format E-Bok
Kopisperre Teknisk DRM
Filformat PDF
Utgivelsesår 1997
Forlag Elsevier Science
Språk Engelsk
ISBN 9780080864433
Se flere detaljer  

Om Effect of Disorder and Defects in Ion-Im

Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented.Key Features* Provides basic knowledge of ion implantation-induced defects* Focuses on physical mechanisms of defect annealing* Utilizes electrical, physical, and optical characterization tools for processed semiconductors* Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination


Kundevurderinger

ARKs anbefalinger

Det finnes ingen vurderinger av dette produktet. Skriv anmeldelse

Anbefalt


Tips en venn