A state-of-the-art overview by internationally recognized researchers, this book reviews the architectures of breakthrough devices required for future intelligent integrated systems. It highlights advanced ailicon-based CMOS technologies. New device and functional architectures are reviewed in chapters on Tunneling Field-Effect Transistors and 3-D monolithic Integration, which the alternative materials could possibly use in the future. It illustrates how to augment silicon technologies by the co-integration of new types of devices, such as molecular and resistive spintronics-based memories and smart sensors, using nanoscale features co-integrated with silicon CMOS or above it.